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박막두께 측정기
Ellipsometer-Thin Film Thickness Measurement System
모델 AcuSR200 Ellipsometer
System Specifications:
1.측정 두께 영역 :: 20 nm to 50 µm
2.측정시간: 초고속 2 ms minimum
3.Accuracy: better than 0.25% (comparing with ellipsometry
results for Thermal Oxide sample by using the
same optical constants)
4.1-Sigma Dynamic Precision: 0.2 nm
1-Sigma Long-Term Repeatability: 0.5 n
TTV,모재두께,휨,비틀림,평탄도,박막의 응력,표면양면3차원 측정기 
Standard System Configuration
- Detector: CCD Array with 2048 pixels
- Light Source: DC regulated Tungsten-Halogen
- Light Delivery: Fiber Optics
- Effective Wavelength range: 400 to 850 nm
- Beam Size: 1 to 5mm (Optional down to 5 µm)
- Stage: Black Anodized Aluminum Alloy
- Communication: USB
- Computer needed: P3 above
- Power: 110– 240 VAC /50-60Hz, 1.5 A
Options
- Transmission Fixture for Transmission and Absorption Measurement.
- Micro spot for measuring small area down to 5 µm size
- Multiple Channel for simultaneously measurement at multiple locations Mapping uniformity over 200 or 300 mm wafer.
Features
- Easy to operate with Window based software
- Advanced optics design for best system performance
- CCD based array detector system to ensure fast measurement
- Measure film thickness up to 5 layers
- Allow to acquire reflection, transmission and absorption spectra in milliseconds
- Capable to be used for real time or in-line thickness, refractive index monitoring
- Advanced Software allows user to use either NK table, dispersion or
- effective media approximation (EMA) for each individual film.
- Upgradeable to MSP (Microspectrophotometer) system, SRM Mapping system,
- Multiple channel system
- Apply to many different type of substrates with different thickness
Applications
Photoresist / polyimide/Oxides/Nitrides
Optical coatings, TiO2, SiO2, Ta2O5…..
Semiconductor compounds
Functional films in MEMS/MOEMS
Thin film transistors (TFT) stack
Conductive oxide: Indium Tin Oxide
전화 : 02 - 3411- 0173 팩스 : 02 - 3411 - 0178
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